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| MICROWAVE CORPORATION HMC324MS8G V00.1200 HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 Features P1dB Output Power: + 16 dBm General Description The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that contains two un-connected amplifiers in parallel inside an 8 lead MSOPG package. When used in conjunction with an external balun, the outputs of the amplifier can be combined to reduce the 2nd harmonic distortion that is generated by the amplifier. With Vcc at +7.5V, the HMC324MS8G offers 13 dB of gain and with power combining and harmonic cancellation, +22 dBm of output power can be achieved. Using a Darlington feedback pair results in reduced sensitivity to normal process variations and provides a good 50-ohm input/ output port match. This amplifier is ideal for RF systems where high linearity is required. The design can operate in 50-ohm and 75-ohm systems which makes it ideal for CATV head-end and modem, and MCNS applications. 1 AMPLIFIERS SMT Output IP3: +31 dBm Single Supply: 8.75V Ultra Small Package: MSOP8G Guaranteed Performance, Parameter Frequency Range Gain @ 25 C Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1dB Compression (P1dB) @ 1 GHz Saturated Output Power (Psat) @ 1 GHz Output Third Order Intercept (IP3) @ 1 GHz Noise Figure Supply Current (Icc) -40 to +60 deg C Vs= 8.75V, RBIAS= 22 Ohm Min. Typ. DC - 3.0 10 13 0.015 8 6 16 13 16 28 13 9 20 16 19 31 6 57 16 0.025 Max. Units GHz dB dB/ C dB dB dB dB m dB m dB m dB mA Note: All specifications refer to a single amplifier. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 156 HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 Gain & Return Loss 20 15 10 RE S P O NS E (dB ) 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 S1 1 S2 1 S2 2 Gain vs. Temperature 20 18 16 14 GA IN (dB ) 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 C +85 C -40 C 1 AMPLIFIERS + 25 C + 85 C -40 C Input Return Loss vs. Temperature 0 +25 C +85 C Output Return Loss vs. Temperature 0 O UTP U T R ETU R N L OS S (dB ) IN P U T R ETUR N LO S S (dB ) -5 -40 C -5 -10 -10 -15 -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) FR E QUE N C Y (G Hz) Reverse Isolation vs. Temperature 0 +25 C +85 C -40 C REV E RS E IS O L A TIO N (dB ) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 157 SMT FR E QUE N C Y (G Hz) FR E QUE N C Y (G Hz) HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1200 P1dB vs. Temperature 24 22 +25 C Psat vs. Temperature 24 22 +85 C -40 C +25 C +85 C -40 C 1 P1dB (dB m ) 20 18 16 14 12 10 8 6 4 0 0.5 1 1.5 2 2.5 3 20 18 P sat (dB m ) 16 14 12 10 8 6 4 AMPLIFIERS 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 SMT FR E QUE N C Y (G Hz) FR E QUE N C Y (G Hz) Power Compression @ 1 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -1 8 -1 6 -1 4 -1 2 -1 0 -8 -6 -4 -2 0 P ou t (dBm ), G AIN (d B), P A E (% ) Power Compression @ 2 GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -1 8 -1 6 -1 4 -1 2 -1 0 -8 -6 -4 -2 0 P ou t (dBm ), G AIN (d B), P A E (% ) P o ut G ain P AE P o ut G ain P AE 2 4 6 8 2 4 6 8 IN PU T P OW E R (dB m) IN PU T P OW E R (dB m) Output IP3 vs. Temperature 34 32 30 28 IP3 (dB m ) 26 24 22 20 18 16 14 0 0.5 1 1.5 2 2.5 3 3.5 4 +25 C +85 C -40 C FR E Q UE N C Y (G Hz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 158 HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 Schematic VS (8.75V) Absolute Maximum Ratings RBIAS (22 Ohm) Vcc OUT1 PIN 4 DC Voltage on Pin 1 C BLOCK 8 Volts +20 dBm 175 C C BLOCK Input Power (RFin)(Vcc= +5V) Channel Temperature (Tc) 1 AMPLIFIERS SMT IN 1 PIN 5 Continuous Pdiss (Ta= 60 C) 507 mW (derate 4.41 mW/ C above 60 C) Storage Temperature Operating Temperature -65 to +150 C -55 to +60 C GND (PINS 2, 3, 5, 6) Note: 1. Select RBIAS to achieve desired Vcc voltage on Pin 1. 2. External blocking capacitors are required on Pins 1, 4, 5, and 8. IN 2 PIN 8 Vcc OUT 2 PIN 1 RBIAS (22 Ohm) VS (8.75V) Outline 1. 2. 3. MATERIAL: A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED. B) LEADFRAME MATERIAL: COPPER ALLOY PLATING : LEAD - TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. 5. 6. UNLESS OTHERWISE SPECIFIED ALL TOL. ARE 0.005 (0.13). CHARACTERS TO BE HELVETICA MEDIUM, APPROX .020 HIGH WHITE INK, LOCATED APPROXIMATELY AS SHOWN. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 159 HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1200 Evaluation PCB for HMC324MS8G 1 AMPLIFIERS SMT The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item J1 - J4 U1 PC B* Description PC Mount SMA Connector HMC324MS8G 104221 Evaluation PCB 1.5" x 1.5" *Circuit Board Material: Rogers 4350 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 160 HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 NOTES: 1 AMPLIFIERS 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 161 SMT |
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